Destech Silicon Carbide, Solid or Foamed

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Destech Silicon Carbide, Solid or Foamed
Categories:	Ceramic; Carbide; Other Engineering Material; Composite Core Material
Material Notes:	Destech silicon carbide foam is produced by chemical vapor reaction (CVR), in which high temperature silicon bearing gases convert glassy, or vitreous, carbon foam to SiC. Destech SiC foam has no carbon core unlike SiC foams produced by chemical vapor deposition (CVD). SiC foam has increased density and electrical resistivity over its carbon counterpart, good oxidation resistance (up to 1650°C), good abrasion resistance, and excellent corrosion resistance (slight corrosion in molten bases, e.g. KOH). The properties shown are for solid, fine-grained, SiC. Ash content is less than 0.1%. Used for heating elements, electrodes, nozzles, and cylinders. Data provided by the manufacturer, Destech Corporation.
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Physical Properties	Original Value	Comments

Bulk Density	1.76 - 1.81 g/cc	Precursor/core material (fine grained isotropic graphite)
	3.12 g/cc	SiC
Density	3.20 g/cc	Apparent density (SiC outer layer)
Open Porosity	<= 0.50 % @Thickness 1.02 - 1.27 mm	Specified for fine grained SiC surface layer

Mechanical Properties	Original Value	Comments
Tensile Strength, Ultimate	>= 231 MPa	Typical for SiC
Flexural Strength	400 MPa	Typical for SiC
Compressive Yield Strength	>= 120 MPa	Graphite substrate

Thermal Properties	Original Value	Comments
CTE, linear	3.50 - 4.00 µm/m-°C @Temperature 20.0 °C	Precursor/core material (fine grained isotropic graphite)
	3.50 - 4.20 µm/m-°C @Temperature 20.0 °C
Maximum Service Temperature, Air	1650 °C	Maximum oxidation resistance temperature

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CDC002 / 770

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