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Tosoh N Semiconductor standard grade, Fused Silica Glass
Categories: Ceramic; Glass

Material Notes: Tosoh N and NP materials are manufactured by fusing a high-purity silica powder using Tosoh's proprietary oxy-hydrogen flame fusion process. Thanks to its high purity, low aluminum content, and extremely low level of bubbles and inclusions, N has become the reference material for a broad range of applications, such as semiconductor manufacturing, metrology, optics, chemical processing, UV and high temperature windows. In particular, N is an enabling material for stringent plasma etch processes used in leading-edge semiconductor manufacturing. NP is an enhanced version of N material, with further reduced alkali content for use in processes that require extreme contamination control. Available in up to 1,200mm square and 580 mm round ingots, N and NP materials are 450mm wafer ready.

Information provided by Tosh Corporation

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Physical PropertiesOriginal ValueComments
Density 2.20 g/cc
Viscosity 12700 cP
@Temperature 1200 °C
 
Mechanical PropertiesOriginal ValueComments
Hardness, Vickers 907.5
Tensile Strength 50.0 MPa
Modulus of Elasticity 74.0 GPaYoung's
Flexural Strength 65.0 - 95.0 MPa
Compressive Strength 1.13 MPa
Poissons Ratio 0.17
Shear Modulus 31.0 GPa
Torsional Stiffness 29.0 MPa
 
Electrical PropertiesOriginal ValueComments
Volume Resistivity 5.00e+16 ohm-cm
Surface Resistance 3.00e+15 ohm
Dielectric Constant 3.9
@Frequency 5.00e+8 Hz
Dielectric Strength 32.0 kV/mm
@Frequency 50 Hz
Dielectric Loss Index <= 1.0
@Frequency 5.00e+8 Hz
 
Thermal PropertiesOriginal ValueComments
CTE, linear 0.570 µm/m-°C
@Temperature 30.0 - 600 °C
Specific Heat Capacity 0.749 J/g-°C
Thermal Conductivity 1.38 W/m-K
Softening Point 1720 °C(?=107.6)*2
Annealing Point 1180 °C(?=1013)
Strain Point 1080 °C(?=1014.5)
 
Descriptive Properties
Chemical Properties? 0.01ppmCu
 0.07 ppmLi
 0.11 ppmMg
 0.12 ppmK
 0.31 ppmFe
 0.9 ppmCa
 1.01 ppmNa
 230 ppmOH
 9.1 ppmAl

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PTOSOH006 / 306464

Specialty Compounds RTP Company

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